Stacked semiconductor die assemblies with support members and associated systems and methods

ABSTRACT

Stacked semiconductor die assemblies with support members and associated systems and methods are disclosed herein. In one embodiment, a semiconductor die assembly can include a package substrate, a first semiconductor die attached to the package substrate, and a plurality of support members also attached to the package substrate. The plurality of support members can include a first support member and a second support member disposed at opposite sides of the first semiconductor die, and a second semiconductor die can be coupled to the support members such that at least a portion of the second semiconductor die is over the first semiconductor die.

CROSS-REFERENCE TO RELATED APPLICATION(S)

This application is a continuation of U.S. patent application Ser. No.15/229,651, filed Aug. 5, 2016, which is a divisional of U.S. patentapplication Ser. No. 14/264,584, filed Apr. 29, 2014, which issued asU.S. Pat. No. 9,418,974, each of which is incorporated herein byreference in its entirety.

TECHNICAL FIELD

The disclosed embodiments relate to semiconductor die assemblies and tosupport members in such assemblies. In several embodiments, the presenttechnology relates to die assemblies that can include a controller dieand memory dies carried above the controller die.

BACKGROUND

Packaged semiconductor dies, including memory chips, microprocessorchips, and imager chips, can include semiconductor dies mounted on apackage substrate. The semiconductor dies are encased in a plasticprotective covering, and each die includes functional features, such asmemory cells, processor circuits, and imager devices. Bond pads on thedies are electrically connected between the functional features andterminals on the package substrate that allow the dies to be connectedto external circuitry.

To increase the density of dies within a package, the dies can bestacked upon one another within the casing. One challenge withvertically stacked dies, however, is that the dies can have differentsizes or footprints. For example, in a memory package, a memorycontroller die can have a smaller footprint than the memory dies withinthe package. The memory controller die can be more difficult to wirebondbecause it is offset from the memory dies. Also, the memory dies cansometimes tilt when stacked upon the smaller memory controller die.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1A is a cross-sectional view of a semiconductor die assemblyconfigured in accordance with an embodiment of the present technology,and FIG. 1B is a top plan view of the assembly of FIG. 1A with a casingand a semiconductor die stack removed from the assembly.

FIG. 2 is a top plan view of a semiconductor wafer that has been cleavedto form support members of the semiconductor die assembly in accordancewith an embodiment of the present technology.

FIGS. 3A-3C are cross-sectional views illustrating the semiconductor dieassembly of FIG. 1A at various stages of manufacture in accordance withan embodiment of the present technology.

FIG. 4 is a cross-sectional view of a semiconductor die assemblyconfigured in accordance with another embodiment of the presenttechnology.

FIG. 5 is a top plan view of a semiconductor die assembly configured inaccordance with another embodiment of the present technology.

FIGS. 6A and 6B are top plan views illustrating semiconductor dieassemblies configured in accordance with several embodiments of thepresent technology.

FIG. 7 is a schematic view of a system that includes a semiconductor dieassembly configured in accordance with embodiments of the presenttechnology.

DETAILED DESCRIPTION

Specific details of several embodiments of stacked semiconductor dieassemblies having spacer support members and associated systems andmethods are described below. The term “semiconductor die” generallyrefers to a die having integrated circuits or components, data storageelements, processing components, and/or other features manufactured onsemiconductor substrates. For example, semiconductor dies can includeintegrated circuit memory and/or logic circuitry. Semiconductor diesand/or other features in semiconductor die packages can be said to be in“thermal contact” with one another if the two structures can exchangeenergy through heat. A person skilled in the relevant art will alsounderstand that the technology may have additional embodiments, and thatthe technology may be practiced without several of the details of theembodiments described below with reference to FIGS. 1-7.

As used herein, the terms “vertical,” “lateral,” “upper” and “lower” canrefer to relative directions or positions of features in thesemiconductor die assemblies in view of the orientation shown in theFigures. For example, “upper” or “uppermost” can refer to a featurepositioned closer to the top of a page than another feature. Theseterms, however, should be construed broadly to include semiconductordevices having other orientations, such as being flipped on their sideor inverted.

FIG. 1A is a cross-sectional view of a semiconductor die assembly 100(“assembly 100”) configured in accordance with an embodiment of thepresent technology. As shown, the assembly 100 includes a packagesubstrate 102 carrying a first semiconductor die, or controller die 103,and first and second support members 130 a and 130 b (collectively“support members 130”) on opposite sides of the controller die 103. Thesupport members 130 carry first and second semiconductor dies, or firstand second memory dies 106 a and 106 b (collectively “memory dies 106”),arranged in a stack above the controller die 103. The package substrate102 includes a plurality of first bond pads 108 a within the footprint(e.g., directly beneath) the first memory die 106 a and a plurality ofsecond bond pads 108 b outside of the footprint (e.g., not directlybeneath) the first memory die 106 a. The first bond pads 108 a arecoupled to corresponding bond pads 109 a on the controller die 103 byfirst wire bonds 111 a, and the second bond pads 108 b are coupled tocorresponding bond pads 109 b on each of the memory dies 106 by secondwire bonds 111 b. The package substrate 102 can include, for example, aprinted circuit board or other suitable substrate having electricalconnectors 104 (shown schematically), such as metal traces, vias, orother suitable connectors. The electrical connectors 104 can couple thefirst bond pads 108 a and/or the second bond pads 108 b to externalcircuitry (not shown) via package contacts 113 and interconnects 114(e.g., bump bonds) at the opposite side of the package substrate 102. Inseveral embodiments, the electrical connectors 104 can also coupleindividual first bond pads 108 a with individual second bond pads 108 bto electrically intercouple the controller die 103 with the memory dies106.

The assembly 100 further includes a package casing 115 composed of anencapsulant 116 that at least partially encapsulates the controller die103, the memory dies 106, and the support members 130. In theillustrated embodiment, the encapsulant 116 also extends into a cavity118 between the package substrate 102 and the first memory die 106 a toat least partially fill the region beneath the first memory die 106 anot occupied by the controller die 103 and the support members. In someembodiments, the portion of the encapsulant 116 in the cavity 118 canreinforce the support members 130 and provide further mechanical supportbeneath the first memory die 106 a. The encapsulant 116 can include, forexample, a thermoset material, an epoxy resin, or other suitablecompound that provides mechanical support, shielding from the ambientenvironment (e.g., from humidity), and/or electrical isolation (e.g.,between wire bonds).

The controller die 103 and the memory dies 106 can each be formed from asemiconductor substrate, such as silicon, silicon-on-insulator, compoundsemiconductor (e.g., Gallium Nitride), or other suitable substrate. Thesemiconductor substrate can be cut or singulated into semiconductor dieshaving any of variety of integrate circuit components or functionalfeatures, such as dynamic random-access memory (DRAM), staticrandom-access memory (SRAM), flash memory, other forms of integratedcircuit devices, including memory, processing circuits, imagingcomponents, and/or other semiconductor devices. In selected embodiments,the assembly 100 can be configured as a memory in which the memory dies106 provide data storage (e.g., NAND dies) and the controller die 103provides memory control (e.g., NAND control). In some embodiments, theassembly 100 can include other semiconductor dies in addition to and/orin lieu of one or more of the controller die 103 and/or the memory dies106. For example, instead of two memory dies, the assembly 100 caninclude more than two memory dies (e.g., four dies, eight dies, etc.) oronly a single memory die. Further, in various embodiments, the dies ofthe assembly 100 can have different sizes. For example, in someembodiments one or both of the memory dies 106 can extend beyond thesupport members 130 at one or more sides.

As further shown in FIG. 1A, the controller die 103 is attached to thepackage substrate 102 by a die-attach material 140 (e.g., a die-attachfilm). The first support member 130 a is attached to the packagesubstrate 102 by a die-attach material 141 a, and the second supportmember 130 b is attached to the package substrate 102 by a die-attachmaterial 141 b. The memory dies 106, in turn, are attached to thecontroller die 103 and the support members 130 by a die-attach material142 and to one another by a film-over-wire material 143 (“over-wirematerial 142”). In several embodiments, the die-attach materials 140,141 a-b, and 142 can be formed from the same or similar materials. Insome embodiments, the over-wire material 143 can be formed from the sameor similar materials 140, 141 a-b, and 142, but the over-wire material143 can have a greater thickness to accommodate a wire portion 112 ofthe first wire bonds 111 a between the memory dies 106. In selectedembodiments, the die-attach materials 140, 141 a-b, and 142 and theover-wire material 143 can each include a laminate film of epoxy-basedmaterial. Such laminate films can include, for example, a die-attachfilm or a dicing-die-attach film (known to those skilled in the art as“DAFs” or “DDFs,” respectively). In one embodiment the die-attachmaterials and/or film-over wire materials can each include DAFs or DDFsprovided by Henkel AG & Co. of Shangai, China (e.g, Model Nos. AblestickATB-100, 100U, 100A, 100U).

In some conventional package assemblies, the controller die can bepositioned between the package substrate and a stack of memory dies.This configuration is typically formed by encapsulating the controllerdie with an encapsulant and then the memory dies are stacked upon thesurface of the encapsulant. One challenge with encapsulating thecontroller die at this stage, however, is that it complicatesmanufacturing. For example, the mounting surface on the encapsulant canbe uneven. When the memory dies are stacked on an uneven mountingsurface, they can cant or tilt to the extent that the dies projectoutside of the protective casing. Also, die tilt can make wirebondingmore difficult because the wire bonds have different lengths at theopposite sides of the assembly. Another conventional manufacturingtechnique involves forming a cavity in the package substrate into whichthe controller die can be inserted. This technique can also complicatemanufacturing and increase costs because it requires the packagesubstrate to be milled or etched to form the cavity.

Embodiments of die assemblies configured in accordance with severalembodiments of the present technology can address these and otherlimitations of conventional die assemblies. For example, one advantageis that the stack of memory dies 106 can be mounted to the supportmembers 130 without having to first encapsulate the controller die 103beneath the memory dies 106. A related advantage is that the hightemperature molding and curing steps for encapsulating the controllerdie can be eliminated and thus reduce thermal cycling. Accordingly,manufacturing can be less complicated because it can eliminate severalmanufacturing steps. Another advantage is that the support members 130can have a coefficient of thermal expansion (CTE) that is similar to orthe same as the memory dies 106. For example, the support members 130can be formed from semiconductor materials, such as silicon. Such CTEmatching reduces thermal stresses within the package during operation.Yet another advantage is that the memory dies 106 are not prone to tiltbecause the support members 130 can have the same height and thedie-attach materials 140, 141 a-b, and 142 can be formed from a laminatefilm with a uniform thickness.

FIG. 1B is a top plan view of the assembly 100 with the casing 115 andthe memory dies 106 shown in FIG. 1A removed for purposes ofillustration. As shown, the controller die 103 is located within aperimeter, or footprint 107 (shown in hidden lines), of the stack ofmemory dies 106 (FIG. 1A) superimposed on the package substrate 102. Thefirst and second support members 130 a and 130 b are also positionedwithin the footprint 107 and extend along first and second sides 105 aand 105 b, respectively, of the controller die 103. In severalembodiments, the support members 130 can each include an elongate memberformed from an interposer substrate, a printed circuit board, asemiconductor wafer or die, or another suitable support material. In oneembodiment described in greater detail below, the support members 130can be pieces of semiconductor material that are cleaved (e.g., diced orsingulated) from a semiconductor wafer or die, such as a “blank” siliconwafer or die.

FIG. 2 is a top plan view of a semiconductor wafer 220 that has beencleaved to form the support members 130 with die attach materials 141 inaccordance with an embodiment of the present technology. In theillustrated embodiment, the support members 130 are formed by firstcovering the semiconductor wafer 220 with a die-attach material 240(e.g., a die-attach film) and then simultaneously cutting the wafer 220and the die-attach material 240 along multiple dicing lines 221. Oncecut, the support members 130 can then be attached to the packagesubstrate 102 (FIG. 1A) via the die-attach materials 141 formed from therespective portions of die-attach material 240. In one embodiment, thesupport members 130 can be formed from a blank silicon wafer. In anotherembodiment, support members can be formed from portions of asemiconductor wafer that might otherwise be discarded. For example,support members 230 can be formed from an edge portion 223 of thesemiconductor wafer 220 left over after die singulation. In additionalor alternate embodiments, non-yielding or non-functioning dies can alsobe cut into multiple pieces to form individual spacer members.

FIGS. 3A-3C are cross-sectional views illustrating the assembly 100 atvarious stages of manufacture in accordance with an embodiment of thepresent technology. Referring first to FIG. 3A, the controller die 103is attached to the package substrate 102 with the die-attach material140, and the first and second support members 130 a-b are attached tothe package substrate with die-attach materials 141 a-b, respectively.In one embodiment, one or more of the die-attach materials 140 and 141a-b can include a pressure-set film that adheres materials together whenit is compressed (e.g., between the package substrate 102 and each ofthe support members 130) beyond a threshold level of pressure. Inanother embodiment, one or more of the die-attach materials 140 and 141a-b can be a UV-set film that is set by exposure to UV radiation.

FIG. 3B shows the assembly 100 after forming the first wirebonds 111 abetween the first bond pads 108 a of the package substrate 102 and thecorresponding bond pads 109 a of the controller die 103. As shown, thesupport members 130 can have a first thickness t₁ that is greater than asecond thickness t₂ of the controller die 103. In several embodiments,the first and second thicknesses t₁ and t₂ can be selected such that awire portion 312 of each of the first wirebonds 111 a does not contactthe die-attach material 142 when the first memory die 106 a is mountedto the support members 130. In another embodiment, the thicknesses t₁and t₂ can be selected such that the wire portion 312 projects at leastpartially into the die-attach material 142. In either case, once thefirst wirebonds 111 a are formed, the first memory die 106 a can beattached to the support members 130 via the die-attach material 142.

FIG. 3C shows the assembly 100 after forming the second wirebonds 111 bbetween the second bond pads 108 b of the package substrate 102 and thecorresponding bond pads 109 b of the first memory die 106 a. After thesecond wirebonds 111 b are formed, the second memory die 106 b can beattached to the first memory die 106 a with the over-wire material 143.Once the memory dies 106 are attached to one another, processing cancontinue with subsequent manufacturing stages. For example, processingcan continue by wire bonding the second memory die 106 b to the packagesubstrate 102 and then molding the package casing 115 (FIG. 1A) over thedie stack. In some embodiments, one or more additional memory dies 306(shown in hidden lines) can be stacked above the second memory die 106 band wirebonded to the second bond pads 108 b of the package substrate102.

FIG. 4 is a cross-sectional view of a semiconductor die assembly 400(“assembly 400”) configured in accordance with another embodiment of thepresent technology. The assembly 400 can include features generallysimilar to those of the assembly 100 described in detail above. Forexample, the assembly 400 includes the controller die 103 and thesupport members 130 attached to the package substrate 120 by thedie-attach materials 140 and 141 a-b. In the arrangement shown in FIG.4, individual memory dies 406 are staggered such that individual bondpads 409 of the memory dies 406 are exposed along at least one edge ofthe stack of memory dies 406. In one aspect of this embodiment,wirebonds 411 can be bonded to the exposed bond pads 409 such that theyare not covered by a film-over-wire material (e.g., the over-wirematerial 143 of FIG. 1A). As such, the memory dies 406 can be assembledusing a relatively thinner die-attach material 440 than a film-over-wirematerial. Also, the stack of memory dies 406 can have a smaller heightthan a stack of the same number of memory dies attached together withthe thicker film-over-wire material.

FIG. 5 is a top plan view of a semiconductor die assembly 500 (“assembly500”) configured in accordance with another embodiment of the presenttechnology. The assembly 500 can include features generally similar tothose of the assemblies described in detail above. For example, theassembly 500 includes the controller die 103 positioned within thefootprint 107 of the memory dies 106 (FIG. 1A). In the illustratedembodiment of FIG. 5, the assembly 500 can also include capacitors 550also within the footprint 107 and coupled to the package substrate 102via bond pads 508. The capacitors 550 can include, for example,monolithic (e.g., ceramic), integrated circuit, or other suitablecapacitor devices. In several embodiments, the capacitors 550 can beconfigured to condition power signals or facilitate power-up. In otherembodiments, the assembly 500 can include additional or alternatecircuit elements (e.g., inductors, resistors, and/or diodes) and/orcircuit components, such as another semiconductor dies at leastpartially within the footprint 107.

FIGS. 6A and 6B are top plan views illustrating semiconductor dieassemblies 600 a and 600 b, respectively, configured in accordance withseveral embodiments of the present technology. The assemblies 600 a and600 b can each include features generally similar to those of theassemblies described in detail above. For example, the semiconductor dieassemblies 600 a and 600 b can each include the cavity 118 between thepackage substrate 102 and the memory dies 106 (FIG. 1A) formed by thesupport members 130.

Referring to FIG. 6A, the semiconductor die assembly 600 a includes athird support member 630 (e.g., an elongate member) extending in adirection generally transverse to each of the support members 130. Inone aspect of this embodiment, the third support member 630 can bespaced apart from the support members 130 by gaps G₁ on opposite sidesof the third support member 630 to facilitate flow of the encapsulant116 into the cavity 118 to form the casing 115 (FIG. 1A). Referring toFIG. 6B, the semiconductor die assembly 600 b can include supportmembers 635 positioned at each side the controller die 103. Similar tothe third support member 630 shown in FIG. 6A, the support members 635can be separated from the support members by gaps G₂ to facilitate flowof the encapsulant 116 into the cavity 118.

Any one of the stacked semiconductor die assemblies described above withreference to FIGS. 1-6B can be incorporated into any of a myriad oflarger and/or more complex systems, a representative example of which issystem 790 shown schematically in FIG. 7. The system 790 can include asemiconductor die assembly 700, a power source 792, a driver 794, aprocessor 796, and/or other subsystems or components 798. Thesemiconductor die assembly 700 can include features generally similar tothose of the stacked semiconductor die assemblies described above. Theresulting system 790 can perform any of a wide variety of functions,such as memory storage, data processing, and/or other suitablefunctions. Accordingly, representative systems 790 can include, withoutlimitation, hand-held devices (e.g., mobile phones, tablets, digitalreaders, and digital audio players), computers, and appliances.Components of the system 790 may be housed in a single unit ordistributed over multiple, interconnected units (e.g., through acommunications network). The components of the system 790 can alsoinclude remote devices and any of a wide variety of computer readablemedia.

From the foregoing, it will be appreciated that specific embodiments ofthe technology have been described herein for purposes of illustration,but that various modifications may be made without deviating from thedisclosure. Also, certain aspects of the new technology described in thecontext of particular embodiments may also be combined or eliminated inother embodiments. Moreover, although advantages associated with certainembodiments of the new technology have been described in the context ofthose embodiments, other embodiments may also exhibit such advantagesand not all embodiments need necessarily exhibit such advantages to fallwithin the scope of the technology. Accordingly, the disclosure andassociated technology can encompass other embodiments not expresslyshown or described herein.

1-18. (canceled)
 19. A semiconductor die assembly, comprising: a packagesubstrate including a set of substrate bond pads; a first semiconductordie attached to the package substrate, the first semiconductor dieincluding a plurality of first die bond pads; a first support memberattached to the package substrate, the first support member locatedapart from a first edge of the first semiconductor die by a first space,wherein the first support member has a first long axis substantiallyparallel to the first edge; a second support member attached to thepackage substrate, the second support member located apart from a secondedge of the first semiconductor die by a second space, wherein thesecond edge is opposite to the first edge and the second support memberhas a second long axis substantially parallel to the first long axis; athird support member attached to the package substrate, the thirdsupport member located apart from a third edge of the firstsemiconductor die by a third space, wherein the third support member hasa third long axis substantially perpendicular to the first and secondlong axes, and wherein the third support member is spaced apart fromeach of the first and second support members; a second semiconductor dieattached to the first, second, and third support members, wherein afootprint of the second semiconductor die wholly comprises the firstsemiconductor die, the first support member next to a first border ofthe footprint, the second support member next to a second border of thefootprint, the third support member next to a third border of thefootprint, and a fourth space located between a fourth border of thefootprint and a fourth edge of the first semiconductor die opposite thethird edge; a die-attach film attaching the first, second, and thirdsupport members to the second semiconductor die, but not attaching thefirst semiconductor die to the second semiconductor die, wherein thedie-attach film extends between the second semiconductor die and thefirst semiconductor die, and between the second semiconductor die andeach of the first, second, and third support members; and a group ofwire bonds including: a first subgroup of the wire bonds of the groupcoupling a first subset of substrate bond pads located in one or more ofthe first, second, and third spaces to corresponding first die bond padsof the plurality; and a second subgroup of the wire bonds of the groupcoupling a second subset of substrate bond pads located in the fourthspace to corresponding first die bond pads of the plurality.
 20. Thesemiconductor die assembly of claim 19, wherein the fourth spaceincludes a first dimension corresponding to a first distance between thefirst support member and the second support member, and a seconddimension corresponding to a second distance between the fourth edge ofthe first semiconductor die and the fourth border of the footprint, andwherein the second dimension is perpendicular to the first dimension.21. The semiconductor die assembly of claim 20, wherein the fourth spaceis exclusive of a support member.
 22. The semiconductor die assembly ofclaim 19, wherein one or more wire bonds of the first subgroup projectat least partially into the die-attach film.
 23. The semiconductor dieassembly of claim 19, wherein one or more wire bonds of the secondsubgroup project at least partially into the die-attach film.
 24. Thesemiconductor die assembly of claim 19, further comprising: a packagecasing that includes an encapsulant at least partially extending into acavity underneath the second semiconductor die, the cavity defined bythe first, second, and third support members, the second semiconductordie, and the package substrate.
 25. The semiconductor die assembly ofclaim 24, wherein the encapsulant surrounds one or more wire bonds ofthe group, and supports the second semiconductor die.
 26. Thesemiconductor die assembly of claim 19, wherein the second semiconductordie corresponds to a memory die configured to provide data storage, andthe first semiconductor die corresponds to a controller die configuredto provide memory control.
 27. The semiconductor die assembly of claim19, wherein the second semiconductor die corresponds to a NAND die. 28.The semiconductor die assembly of claim 19, further comprising: a thirdsemiconductor die located above the second semiconductor die, wherein afirst edge of the third semiconductor die is offset with respect to afirst edge of the second semiconductor die.
 29. The semiconductor dieassembly of claim 19, wherein each of the first, second, and thirdsupport members comprises a first height that is greater than a secondheight of the first semiconductor die.
 30. The semiconductor dieassembly of claim 19, wherein the set of substrate bond pads comprisesone or more substrate bond pads configured to couple with one or morecircuit components including a capacitor, an inductor, a resistor, adiode, or a combination thereof.
 31. The semiconductor die assembly ofclaim 19, wherein each of the first, second, and third support memberscomprises silicon.
 32. The semiconductor die assembly of claim 19,wherein the die-attach film includes a pressure-set film.
 33. Asemiconductor die assembly, comprising: a package substrate including aperimeter and a set of substrate bond pads; a controller die attached tothe package substrate, the controller die including a plurality ofcontroller die bond pads; a first support member attached to the packagesubstrate, the first support member located apart from a first edge ofthe controller die by a first space, wherein the first support memberhas a first long axis substantially parallel to the first edge; a secondsupport member attached to the package substrate, the second supportmember located apart from a second edge of the controller die by asecond space, wherein the second edge is opposite to the first edge andthe second support member has a second long axis substantially parallelto the first long axis; a third support member attached to the packagesubstrate, the third support member located apart from a third edge ofthe controller die by a third space, wherein the third support memberhas a third long axis substantially perpendicular to the first andsecond long axes, and wherein the third support member is spaced apartfrom each of the first and second support members; a first memory dieattached to the first, second, and third support members, wherein afootprint of the first memory die wholly comprises the controller die,the first support member next to a first border of the footprint, thesecond support member next to a second border of the footprint, thethird support member next to a third border of the footprint, and afourth space located between a fourth border of the footprint and afourth edge of the controller die opposite the third edge; a firstdie-attach film attaching the first, second, and third support membersto the first memory die, but not attaching the logic die to the firstmemory die, wherein the first die-attach film extends between the firstmemory die and the controller die and between the first memory die andeach of the first, second, and third support members; and a group ofwire bonds including: a first subgroup of the wire bonds of the groupcoupling a first subset of substrate bond pads located in one or more ofthe first, second, and third spaces to corresponding controller die bondpads of the plurality; and a second subgroup of the wire bonds of thegroup coupling a second subset of substrate bond pads located in thefourth space to corresponding controller die bond pads of the plurality.34. The semiconductor die assembly of claim 33, further comprising: asecond memory die located above the first memory die, wherein a firstedge of the second memory die is offset by a fifth space with respect toa first edge of the first memory die, wherein the fifth space includesone or more memory bond pads of the first memory die.
 35. Thesemiconductor die assembly of claim 34, further comprising: a thirdsubgroup of the wire bonds of the group coupling a third subset ofsubstrate bond pads to the one or more memory bond pads of the firstmemory die, wherein the third subset of substrate bond pads is locatedbetween the footprint of the first memory die and the perimeter of thepackage substrate.
 36. The semiconductor die assembly of claim 34,wherein the first and second memory dies comprise NAND dies,respectively.
 37. The semiconductor die assembly of claim 34, furthercomprising: a second die-attach film attaching the second memory die tothe first memory die.
 38. A semiconductor die assembly, comprising: apackage substrate including a perimeter and a set of substrate bondpads; a controller die attached to the package substrate, the controllerdie including a plurality of controller die bond pads; a first supportmember attached to the package substrate, the first support memberlocated apart from a first edge of the controller die by a first space,wherein the first support member has a first long axis substantiallyparallel to the first edge; a second support member attached to thepackage substrate, the second support member located apart from a secondedge of the controller die by a second space, wherein the second edge isopposite to the first edge and the second support member has a secondlong axis substantially parallel to the first long axis; a third supportmember attached to the package substrate, the third support memberlocated apart from a third edge of the controller die by a third space,wherein the third support member has a third long axis substantiallyperpendicular to the first and second long axes, and wherein the thirdsupport member is spaced apart from each of the first and second supportmembers; a memory die attached to the first, second, and third supportmembers, wherein a footprint of the first memory die wholly comprisesthe controller die, the first support member next to a first border ofthe footprint, the second support member next to a second border of thefootprint, the third support member next to a third border of thefootprint, and a fourth space located between a fourth border of thefootprint and a fourth edge of the controller die opposite the thirdedge, wherein: the fourth space includes a first dimension correspondingto a first distance between the first support member and the secondsupport member, and a second dimension corresponding to a seconddistance between the fourth edge of the controller die and the fourthborder of the footprint, and wherein the second dimension isperpendicular to the first dimension, and the fourth space is exclusiveof a support member; a die-attach film attaching the first, second, andthird support members to the memory die, but not attaching the logic dieto the memory die, wherein the die-attach film extends between thememory die and the controller die and between the memory die and each ofthe first, second, and third support members; and a group of wire bondsincluding: a first subgroup of the wire bonds of the group coupling afirst subset of substrate bond pads located in one or more of the first,second, and third spaces to corresponding controller die bond pads ofthe plurality, wherein one or more wire bonds of the first subgroupproject at least partially into the die-attach film; and a secondsubgroup of the wire bonds of the group coupling a second subset ofsubstrate bond pads located in the fourth space to correspondingcontroller die bond pads of the plurality, wherein one or more wirebonds of the second subgroup project at least partially into thedie-attach film.